Chilas develops and commercializes widely tunable, ultra-narrow linewidth external cavity lasers based on hybrid integration. The lasers can be tuned over the C-band covering a wavelength range larger than 100 nm, with an impressive linewidth below 5 kHz. With high performance and low SWaP, Chilas’ lasers benefit customers worldwide with their applications in coherent optical communication, fiber sensing, LiDAR, quantum key distribution, microwave photonics and more.
Chilas lasers combine the best of III-V semiconductor and silicon nitride (Si3N4) technologies and have distinctive advantages over dfb-lasers of which the most important are ultra-narrow linewidth, very wide tuning range and small footprint.
Chilas lasers are made with hybrid-integration laser technology. Chilas’ laser comprises an InP reflective semiconductor optical amplifier (RSOA) as gain medium and a Si3N4 waveguide circuit as external cavity. The RSOA is edge-coupled to the external cavity. Two coupled micro-ring resonators (MRRs) with slightly different free spectral range (FSR) in the cavity ensure stable single frequency operation due to the Vernier effect. By means of heater elements the micro-ring resonators can be tuned over a 2𝜋 phase shift, permitting the laser to address any wavelength within the gain bandwidth. Due to low cavity loss and long optical cavity length, Chilas’ laser can achieve high output power (> 20mW) and ultra-narrow linewidth (< 1kHz).